NVATS5A114PLZ Specs and Replacement

Type Designator: NVATS5A114PLZ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 72 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: ATPAK

NVATS5A114PLZ substitution

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NVATS5A114PLZ datasheet

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NVATS5A114PLZ

NVATS5A114PLZ Power MOSFET 60 V, 16 m , 60 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 16 m @ 10 V High Current Capability 60 V... See More ⇒

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NVATS5A114PLZ

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NVATS5A114PLZ

NVATS5A112PLZ Power MOSFET 60 V, 43 m , 27 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive www.onsemi.com applications. Features Low On-Resistance VDSS RDS(on) Max ID Max High Current Capability 43 m @ 10 V 60... See More ⇒

 6.1. Size:805K  onsemi
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NVATS5A114PLZ

NVATS5A107PLZ Power MOSFET 40 V, 17 m , 55 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 17 m @ 10 V High Current Capability 40... See More ⇒

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Detailed specifications: SI8205A, SI8205S, SI9435, TX216521M6R, PS3400N, NVATS5A107PLZ, NVATS5A112PLZ, NVATS5A113PLZ, 5N65, NVATS5A302PLZ, NVATS5A304PLZ, NVATS68301PZ, NVB072N65S3, NVB082N65S3F, NVB110N65S3F, NVB150N65S3F, NVB190N65S3F

Keywords - NVATS5A114PLZ MOSFET specs

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