All MOSFET. NVBLS4D0N15MC Datasheet

 

NVBLS4D0N15MC Datasheet and Replacement


   Type Designator: NVBLS4D0N15MC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 316 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 187 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 2055 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
   Package: H-PSOF8L11.68X9.80 MO-299A
 

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NVBLS4D0N15MC Datasheet (PDF)

 ..1. Size:410K  onsemi
nvbls4d0n15mc.pdf pdf_icon

NVBLS4D0N15MC

MOSFET Single N-Channel150 V, 4.4 mW, 187 ANVBLS4D0N15MCFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com Lowers Switching Noise/EMI AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant150 V 4.4 mW @ 10 V 187

 9.1. Size:490K  onsemi
nvbls0d5n04m8.pdf pdf_icon

NVBLS4D0N15MC

NVBLS0D5N04M8MOSFET Power, Single,N-Channel40 V, 300 A, 0.57 mWFeatureswww.onsemi.com Typical RDS(on) = 0.46 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 220 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS TJ = 25C unless otherwise notedMO-299AParameter

 9.2. Size:413K  onsemi
nvbls1d1n08h.pdf pdf_icon

NVBLS4D0N15MC

MOSFET - Power, SingleN-Channel, TOLL80 V, 1.05 mW, 351 ANVBLS1D1N08HFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP Capable Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant80 V 1.05 mW @ 10 V 351 ATypical Ap

 9.3. Size:394K  onsemi
nvbls001n06c.pdf pdf_icon

NVBLS4D0N15MC

MOSFET - Power, SingleN-Channel, TOLL60 V, 0.9 mW, 422 ANVBLS001N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable60 V 0.9 mW @ 10 V 422 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Datasheet: NVBG160N120SC1 , NVBGS4D1N15MC , NVBGS6D5N15MC , NVBLS001N06C , NVBLS0D5N04M8 , NVBLS0D7N04M8 , NVBLS0D7N06C , NVBLS1D1N08H , 75N75 , NVC3S5A51PLZ , NVD5C446N , NVD5C454N , NVD5C454NL , NVD5C632NL , NVD5C668NL , NVD5C688NL , NVD6415ANL .

History: 2SK3617 | STL24N60M2 | SWB086R68E7T | 2SK4113 | CS2N60D | HYG050N08NS1P | FIR2N60ALG

Keywords - NVBLS4D0N15MC MOSFET datasheet

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