All MOSFET. NVD5C446N Datasheet

 

NVD5C446N MOSFET. Datasheet pdf. Equivalent


   Type Designator: NVD5C446N
   Marking Code: 5C446N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 101 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 101 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 34.3 nC
   trⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: DPAK

 NVD5C446N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVD5C446N Datasheet (PDF)

 ..1. Size:221K  onsemi
 nvd5c446n.pdf

NVD5C446N NVD5C446N

NVD5C446NMOSFET Power, SingleN-Channel40 V, 3.5 mW, 101 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS40 V 3.5 mW @ 10 V 101 ACompliantMAXIMUM RATINGS (TJ = 25C unless

 8.1. Size:227K  onsemi
 nvd5c454nl.pdf

NVD5C446N NVD5C446N

NVD5C454NLMOSFET Power, Single,N-Channel,40 V, 3.9 mW, 88 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.9 mW @ 10 VCompliant40 V 88 A5.7 mW @ 4.5 VMAXIMUM RATINGS (

 8.2. Size:225K  onsemi
 nvd5c454n.pdf

NVD5C446N NVD5C446N

NVD5C454NMOSFET Power, SingleN-Channel40 V, 4.2 mW, 83 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS40 V 4.2 mW @ 10 V 83 ACompliantMAXIMUM RATINGS (TJ = 25C unless ot

 9.1. Size:186K  1
 nvd5c648nl.pdf

NVD5C446N NVD5C446N

NVD5C648NLMOSFET Power, SingleN-Channel60 V, 4.1 mW, 89 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) ID AEC-Q101 Qualified and PPAP Capable4.1 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS60 V 89 ACompliant5.7 mW @ 4.5 VMAXIMUM RATINGS (TJ

 9.2. Size:86K  onsemi
 nvd5c632nl.pdf

NVD5C446N NVD5C446N

NVD5C632NLPower MOSFET60 V, 2.5 mW, 155 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID2.5 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted

 9.3. Size:226K  onsemi
 nvd5c648nl.pdf

NVD5C446N NVD5C446N

NVD5C648NLMOSFET Power, SingleN-Channel60 V, 4.1 mW, 89 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) ID AEC-Q101 Qualified and PPAP Capable4.1 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS60 V 89 ACompliant5.7 mW @ 4.5 VMAXIMUM RATINGS (TJ

 9.4. Size:191K  onsemi
 nvd5c688nl.pdf

NVD5C446N NVD5C446N

NVD5C688NLPower MOSFET60 V, 27.4 mW, 17 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID27.4 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise note

 9.5. Size:190K  onsemi
 nvd5c668nl.pdf

NVD5C446N NVD5C446N

NVD5C668NLPower MOSFET60 V, 8.9 mW, 49 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID8.9 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

 9.6. Size:265K  inchange semiconductor
 nvd5c648nl.pdf

NVD5C446N NVD5C446N

isc N-Channel MOSFET Transistor NVD5C648NLFEATURESDrain Current I = 89A@ T =25D CDrain Source Voltage-V = 60V(Min)DSSStatic Drain-Source On-ResistanceR :4.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 9.7. Size:286K  inchange semiconductor
 nvd5c668nl.pdf

NVD5C446N NVD5C446N

isc N-Channel MOSFET Transistor NVD5C668NLFEATURESDrain Current : I = 49A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 8.9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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