NVMFD016N06C
MOSFET. Datasheet pdf. Equivalent
Type Designator: NVMFD016N06C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 36
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 32
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 6.9
nC
trⓘ - Rise Time: 1.7
nS
Cossⓘ -
Output Capacitance: 319
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0163
Ohm
Package:
DFN8-5X6
NVMFD016N06C
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVMFD016N06C
Datasheet (PDF)
..1. Size:163K onsemi
nvmfd016n06c.pdf 
MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 16.3 mW, 32 ANVMFD016N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD016N06C - Wettable Flank Option for Enhanced OpticalInspection 60 V 16.3 mW @ 10 V 32 A AEC-Q10
8.1. Size:229K 1
nvmfd024n06ct1g.pdf
MOSFET Power, DualN-Channel, SO-8FL60 V, 22.6 mW, 24 ANVMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD024N06C - Wettable Flank Option for Enhanced Optical60 V 22.6 mW @ 10 V 24 AInspection AEC-Q101
8.2. Size:227K onsemi
nvmfd030n06c.pdf
MOSFET - Power, DualN-Channel, DUAL SO-8FL60 V, 29.7 mW, 19 ANVMFD030N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD030N06C - Wettable Flank Option for Enhanced OpticalInspection60 V 29.7 mW @ 10 V 19 A AEC-Q
8.3. Size:224K onsemi
nvmfd020n06c.pdf
MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 20.3 mW, 27 ANVMFD020N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD020N06C - Wettable Flank Option for Enhanced OpticalInspection60 V 20.3 mW @ 10 V 27 A AEC-Q1
8.4. Size:229K onsemi
nvmfd024n06c.pdf
MOSFET Power, DualN-Channel, SO-8FL60 V, 22.6 mW, 24 ANVMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD024N06C - Wettable Flank Option for Enhanced Optical60 V 22.6 mW @ 10 V 24 AInspection AEC-Q101
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