All MOSFET. NVMFD024N06C Datasheet

 

NVMFD024N06C MOSFET. Datasheet pdf. Equivalent


   Type Designator: NVMFD024N06C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 5.7 nC
   trⓘ - Rise Time: 1.3 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0226 Ohm
   Package: 24DN6C 24DN6W

 NVMFD024N06C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVMFD024N06C Datasheet (PDF)

 ..1. Size:229K  onsemi
 nvmfd024n06c.pdf

NVMFD024N06C NVMFD024N06C

MOSFET Power, DualN-Channel, SO-8FL60 V, 22.6 mW, 24 ANVMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD024N06C - Wettable Flank Option for Enhanced Optical60 V 22.6 mW @ 10 V 24 AInspection AEC-Q101

 0.1. Size:229K  1
 nvmfd024n06ct1g.pdf

NVMFD024N06C NVMFD024N06C

MOSFET Power, DualN-Channel, SO-8FL60 V, 22.6 mW, 24 ANVMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD024N06C - Wettable Flank Option for Enhanced Optical60 V 22.6 mW @ 10 V 24 AInspection AEC-Q101

 7.1. Size:224K  onsemi
 nvmfd020n06c.pdf

NVMFD024N06C NVMFD024N06C

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 20.3 mW, 27 ANVMFD020N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD020N06C - Wettable Flank Option for Enhanced OpticalInspection60 V 20.3 mW @ 10 V 27 A AEC-Q1

 8.1. Size:163K  onsemi
 nvmfd016n06c.pdf

NVMFD024N06C NVMFD024N06C

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 16.3 mW, 32 ANVMFD016N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD016N06C - Wettable Flank Option for Enhanced OpticalInspection 60 V 16.3 mW @ 10 V 32 A AEC-Q10

 8.2. Size:227K  onsemi
 nvmfd030n06c.pdf

NVMFD024N06C NVMFD024N06C

MOSFET - Power, DualN-Channel, DUAL SO-8FL60 V, 29.7 mW, 19 ANVMFD030N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD030N06C - Wettable Flank Option for Enhanced OpticalInspection60 V 29.7 mW @ 10 V 19 A AEC-Q

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History: BL6N120-W | FDD86102LZ | CES2301 | KCY3303S

 

 
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