NVMFS5C450NL Specs and Replacement

Type Designator: NVMFS5C450NL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 1000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: DFN5

NVMFS5C450NL substitution

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NVMFS5C450NL datasheet

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NVMFS5C450NL

NVMFS5C450NL Power MOSFET 40 V, 2.8 mW, 110 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C450NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 2.8 mW ... See More ⇒

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NVMFS5C450NL

NVMFS5C450N MOSFET Power, Single N-Channel 40 V, 3.3 mW, 102 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C450NWF - Wettable Flank Option for Enhanced Optical 40 V 3.3 mW @ 10 V 102 A Inspection AEC-Q101 Qualif... See More ⇒

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NVMFS5C450NL

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NVMFS5C450NL

MOSFET Power, Single N-Channel 40 V, 4.5 mW, 80 A NVMFS5C456N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C456NWF - Wettable Flank Option for Enhanced Optical 40 V 4.5 mW @ 10 V 80 A Inspection AEC-Q101 Qualifie... See More ⇒

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Detailed specifications: NVMFS5C406NL, NVMFS5C410N, NVMFS5C426N, NVMFS5C426NL, NVMFS5C430N, NVMFS5C430NL, NVMFS5C442N, NVMFS5C450N, IRF4905, NVMFS5C456N, NVMFS5C456NL, NVMFS5C460N, NVMFS5C460NL, NVMFS5C466N, NVMFS5C468N, NVMFS5C468NL, NVMFS5C612N

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