NVMFS5C673NL Specs and Replacement

Type Designator: NVMFS5C673NL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm

Package: DFN5

NVMFS5C673NL substitution

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NVMFS5C673NL datasheet

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NVMFS5C673NL

MOSFET Power, Single N-Channel 60 V, 9.2 mW, 50 A NVMFS5C673NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NLWF - Wettable Flank Option for Enhanced Optical 9.2 mW @ 10 V 60 V 50 A Inspection 13 mW @ 4.5 V ... See More ⇒

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NVMFS5C673NL

MOSFET Power, Single, N-Channel 60 V, 10.7 mW, 50 A NVMFS5C673N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NWF - Wettable Flank Option for Enhanced Optical 60 V 10.7 mW @ 10 V 50 A Inspection AEC-Q101 Quali... See More ⇒

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NVMFS5C673NL

MOSFET Power, Single, N-Channel 60 V, 7.0 mW, 71 A NVMFS5C670N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C670NWF - Wettable Flank Option for Enhanced Optical 60 V 7.0 mW @ 10 V 71 A Inspection AEC-Q101 Qualifi... See More ⇒

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NVMFS5C673NL

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Detailed specifications: NVMFS5C468NL, NVMFS5C612N, NVMFS5C628N, NVMFS5C628NL, NVMFS5C638NL, NVMFS5C645NL, NVMFS5C670N, NVMFS5C673N, AON6380, NVMFS5C677NL, NVMFS5C680NL, NVMFS5C682NL, NVMFS5H600NL, NVMFS5H663NL, NVMFS5H663NLWF, NVMFS6B14NL, NVMFS6B75NL

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