NVMFS5C677NL Datasheet and Replacement
Type Designator: NVMFS5C677NL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 340 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: DFN5
NVMFS5C677NL substitution
NVMFS5C677NL Datasheet (PDF)
nvmfs5c670n.pdf

MOSFET Power, Single,N-Channel60 V, 7.0 mW, 71 ANVMFS5C670NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C670NWF - Wettable Flank Option for Enhanced Optical60 V 7.0 mW @ 10 V 71 AInspection AEC-Q101 Qualifi
nvmfs5c673n.pdf

MOSFET Power, Single,N-Channel60 V, 10.7 mW, 50 ANVMFS5C673NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NWF - Wettable Flank Option for Enhanced Optical60 V 10.7 mW @ 10 V 50 AInspection AEC-Q101 Quali
nvmfs5c673nl.pdf

MOSFET Power, SingleN-Channel60 V, 9.2 mW, 50 ANVMFS5C673NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NLWF - Wettable Flank Option for Enhanced Optical9.2 mW @ 10 V60 V 50 AInspection13 mW @ 4.5 V
Datasheet: NVMFS5C612N , NVMFS5C628N , NVMFS5C628NL , NVMFS5C638NL , NVMFS5C645NL , NVMFS5C670N , NVMFS5C673N , NVMFS5C673NL , AO4407 , NVMFS5C680NL , NVMFS5C682NL , NVMFS5H600NL , NVMFS5H663NL , NVMFS5H663NLWF , NVMFS6B14NL , NVMFS6B75NL , NVMFS6D1N08H .
Keywords - NVMFS5C677NL MOSFET datasheet
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History: SI4622DY | VBZL80N03



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