NVMFS6H824NL
MOSFET. Datasheet pdf. Equivalent
Type Designator: NVMFS6H824NL
Marking Code: 6H824L_824LWF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 116
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 110
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 52
nC
trⓘ - Rise Time: 111
nS
Cossⓘ -
Output Capacitance: 366
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004
Ohm
Package:
DFN5
NVMFS6H824NL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVMFS6H824NL
Datasheet (PDF)
..1. Size:175K onsemi
nvmfs6h824nl.pdf 
MOSFET - Power, SingleN-Channel80 V, 4 mW, 110 ANVMFS6H824NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H824NLWF - Wettable Flank Option for Enhanced OpticalInspection4 mW @ 10 V80 V 110 A AEC-Q101 Qualified
3.1. Size:176K onsemi
nvmfs6h824n.pdf
MOSFET - Power, SingleN-Channel80 V, 4.5 mW, 107 ANVMFS6H824NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H824NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 4.5 mW @ 10 V 107 A AEC-Q101 Qualifie
6.1. Size:174K onsemi
nvmfs6h858nl.pdf
MOSFET - Power, SingleN-Channel80 V, 19.5 mW, 30 ANVMFS6H858NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H858NLWF - Wettable Flank Option for Enhanced OpticalInspection19.5 mW @ 10 V80 V 30 A AEC-Q101 Quali
6.2. Size:174K onsemi
nvmfs6h818n.pdf
NVMFS6H818NMOSFET Power, SingleN-Channel80 V, 3.7 mW, 123 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H818NWF - Wettable Flank Option for Enhanced OpticalInspection80 V 3.7 mW @ 10 V 123 A AEC-Q101 Qualif
6.3. Size:177K onsemi
nvmfs6h848n.pdf
MOSFET - Power, SingleN-Channel80 V, 9.4 mW, 64 ANVMFS6H848NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H848NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 9.4 mW @ 10 V 64 A AEC-Q101 Qualified
6.4. Size:172K onsemi
nvmfs6h801nl.pdf
MOSFET - Power, SingleN-Channel80 V, 2.7 mW, 160 ANVMFS6H801NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H801NLWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection2.7 mW @ 10 V AEC-Q101 Qualified and PPA
6.5. Size:178K onsemi
nvmfs6h852n.pdf
MOSFET - Power, SingleN-Channel80 V, 14.2 mW, 43 ANVMFS6H852NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H852NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 14.2 mW @ 10 V 43 A AEC-Q101 Qualifie
6.6. Size:180K onsemi
nvmfs6h864n.pdf
MOSFET - Power, SingleN-Channel80 V, 32 mW, 23 ANVMFS6H864NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H864NWF - Wettable Flank Option for Enhanced Optical80 V 32 mW @ 10 V 23 AInspection AEC-Q101 Qualified an
6.7. Size:172K onsemi
nvmfs6h818nl.pdf
MOSFET - Power, SingleN-Channel80 V, 3.2 mW, 135 ANVMFS6H818NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H818NLWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection3.2 mW @ 10 V AEC-Q101 Qualified and PPA
6.8. Size:203K onsemi
nvmfs6h801n.pdf
MOSFET Power, Single,N-Channel80 V, 2.8 mW, 157 ANVMFS6H801NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H801NWF - Wettable Flank Option for Enhanced OpticalInspection80 V 2.8 mW @ 10 V 157 A AEC-Q101 Quali
6.9. Size:196K onsemi
nvmfs6h800nl.pdf
NVMFS6H800NLPower MOSFETSingle N-Channel, 80 V, 1.9 mW, 224 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS6H800NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable The
6.10. Size:175K onsemi
nvmfs6h836nl.pdf
MOSFET - Power, SingleN-Channel80 V, 6.2 mW, 77 ANVMFS6H836NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H836NLWF - Wettable Flank Option for Enhanced OpticalInspection6.2 mW @ 10 V80 V77 A AEC-Q101 Qualif
6.11. Size:176K onsemi
nvmfs6h836n.pdf
MOSFET - Power, SingleN-Channel80 V, 6.7 mW, 80 ANVMFS6H836NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H836NWF - Wettable Flank Option for Enhanced OpticalInspection80 V 6.7 mW @ 10 V 80 A AEC-Q101 Qualified
6.12. Size:173K onsemi
nvmfs6h864nl.pdf
MOSFET - Power, SingleN-Channel80 V, 29 mW, 22 ANVMFS6H864NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H864NLWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection29 mW @ 10 V AEC-Q101 Qualified and PPAP C
6.13. Size:176K onsemi
nvmfs6h848nl.pdf
MOSFET - Power, SingleN-Channel80 V, 8.8 mW, 59 ANVMFS6H848NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H848NLWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection8.8 mW @ 10 V AEC-Q101 Qualified and PPAP
6.14. Size:178K onsemi
nvmfs6h852nl.pdf
MOSFET - Power, SingleN-Channel80 V, 13.1 mW, 42 ANVMFS6H852NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H852NLWF - Wettable Flank Option for Enhanced OpticalInspection13.1 mW @ 10 V80 V 42 A AEC-Q101 Quali
6.15. Size:178K onsemi
nvmfs6h858n.pdf
MOSFET - Power, SingleN-Channel80 V, 20.7 mW, 32 ANVMFS6H858NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H858NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 20.7 mW @ 10 V 32 A AEC-Q101 Qualifie
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