All MOSFET. NVTFS014P04M8L Datasheet

 

NVTFS014P04M8L Datasheet and Replacement


   Type Designator: NVTFS014P04M8L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 61 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 49 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 97.4 nS
   Cossⓘ - Output Capacitance: 682 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0138 Ohm
   Package: WDFN8
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NVTFS014P04M8L Datasheet (PDF)

 ..1. Size:217K  onsemi
nvtfs014p04m8l.pdf pdf_icon

NVTFS014P04M8L

MOSFET Power, Single,P-Channel-40 V, 13.8 mW, -49 ANVTFS014P04M8LFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS014P04M8L - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable13.8 mW @ -10 V These D

 7.1. Size:320K  onsemi
nvtfs010n10mcl.pdf pdf_icon

NVTFS014P04M8L

NVTFS010N10MCLMOSFET - Power, SingleN-Channel100 V, 10.6 mW, 57.8 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFWS010N10MCLTAG - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable10.6 mW @ 10 V100 V 57.8

 7.2. Size:201K  onsemi
nvtfs015n04c.pdf pdf_icon

NVTFS014P04M8L

NVTFS015N04CMOSFET Power, SingleN-Channel40 V, 17.3 mW, 27 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS015N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 17.3 mW @ 10 V 27 A These

 7.3. Size:268K  onsemi
nvtfs016n06c.pdf pdf_icon

NVTFS014P04M8L

MOSFET - Power, SingleN-Channel, m8FL60 V, 16.3 mW, 32 ANVTFS016N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS016N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(on) MAX ID MAXInspection60 V 16.3 mW @ 10 V 32 A AEC-

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: CSD17322Q5A | IRLU9343PBF | 2SK3437 | ME50N06A | HGM120N06SL | VST012N06MS | 15NM70L-TF34-T

Keywords - NVTFS014P04M8L MOSFET datasheet

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