All MOSFET. NVTFS014P04M8L Datasheet

 

NVTFS014P04M8L MOSFET. Datasheet pdf. Equivalent


   Type Designator: NVTFS014P04M8L
   Marking Code: 014M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 61 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 49 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 26.5 nC
   trⓘ - Rise Time: 97.4 nS
   Cossⓘ - Output Capacitance: 682 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0138 Ohm
   Package: WDFN8

 NVTFS014P04M8L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVTFS014P04M8L Datasheet (PDF)

 ..1. Size:217K  onsemi
 nvtfs014p04m8l.pdf

NVTFS014P04M8L NVTFS014P04M8L

MOSFET Power, Single,P-Channel-40 V, 13.8 mW, -49 ANVTFS014P04M8LFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS014P04M8L - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable13.8 mW @ -10 V These D

 7.1. Size:320K  onsemi
 nvtfs010n10mcl.pdf

NVTFS014P04M8L NVTFS014P04M8L

NVTFS010N10MCLMOSFET - Power, SingleN-Channel100 V, 10.6 mW, 57.8 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFWS010N10MCLTAG - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable10.6 mW @ 10 V100 V 57.8

 7.2. Size:201K  onsemi
 nvtfs015n04c.pdf

NVTFS014P04M8L NVTFS014P04M8L

NVTFS015N04CMOSFET Power, SingleN-Channel40 V, 17.3 mW, 27 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS015N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 17.3 mW @ 10 V 27 A These

 7.3. Size:268K  onsemi
 nvtfs016n06c.pdf

NVTFS014P04M8L NVTFS014P04M8L

MOSFET - Power, SingleN-Channel, m8FL60 V, 16.3 mW, 32 ANVTFS016N06CFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS016N06C - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(on) MAX ID MAXInspection60 V 16.3 mW @ 10 V 32 A AEC-

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FK7UM-12

 

 
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