NVTFS5C460NL
MOSFET. Datasheet pdf. Equivalent
Type Designator: NVTFS5C460NL
Marking Code: 60NL_60LW
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 74
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 11
nC
trⓘ - Rise Time: 97
nS
Cossⓘ -
Output Capacitance: 530
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048
Ohm
Package:
WDFN8
NVTFS5C460NL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVTFS5C460NL
Datasheet (PDF)
..1. Size:195K onsemi
nvtfs5c460nl.pdf 
MOSFET Power, SingleN-Channel40 V, 4.8 mW, 74 ANVTFS5C460NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5C460NLWF - Wettable Flanks Product4.8 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 74 A These
5.1. Size:209K onsemi
nvtfs5c466nl.pdf
NVTFS5C466NLMOSFET - Power, SingleN-Channel40 V, 7.3 mW, 51 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C466NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable7.3 mW @ 10 V These Devices are
6.1. Size:193K onsemi
nvtfs5c453nl.pdf
MOSFET Power, SingleN-Channel40 V, 3.1 mW, 107 ANVTFS5C453NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS5C453NLWF - Wettable Flanks Product3.1 mW @ 10 V40 V107 A AEC-Q101 Qualified and PPAP Capable5.2 mW
6.2. Size:183K onsemi
nvtfs5c454nl.pdf
NVTFS5C454NLPower MOSFET40 V, 4.0 mW, 85 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C454NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro
6.3. Size:270K onsemi
nvtfs5c471nl.pdf
MOSFET Power, SingleN-Channel40 V, 9.0 mW, 41 ANVTFS5C471NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5C471NLWF - Wettable Flanks Product9.0 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 41 A These
6.4. Size:198K onsemi
nvtfs5c478nl.pdf
MOSFET Power, SingleN-Channel40 V, 14 mW, 26 ANVTFS5C478NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C478NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable14 mW @ 10 V These Devices are
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