STV12N20 Spec and Replacement
Type Designator: STV12N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: SO10
STV12N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STV12N20 Specs
Detailed specifications: STP7NA60FI , STP8N50XI , STP8NA50 , STP8NA50FI , STP9N30 , STP9NA50 , STP9NA50FI , STV10NA40 , IRF520 , STV18N20 , STV33N10 , STV36N06 , STV3NA80 , STV40N05 , STV40N10 , STV4N100 , STV4NA60 .
History: HGP098N10AL | HGP100N12S | AP60N03Y | AP60N06F | UPA2755AGR | HGP095NE4SL
Keywords - STV12N20 MOSFET specs
STV12N20 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: HGP098N10AL | HGP100N12S | AP60N03Y | AP60N06F | UPA2755AGR | HGP095NE4SL
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