STV12N20 Datasheet. Specs and Replacement

Type Designator: STV12N20  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: SO10

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STV12N20 datasheet

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STV12N20

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Detailed specifications: STP7NA60FI, STP8N50XI, STP8NA50, STP8NA50FI, STP9N30, STP9NA50, STP9NA50FI, STV10NA40, K3569, STV18N20, STV33N10, STV36N06, STV3NA80, STV40N05, STV40N10, STV4N100, STV4NA60

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