STV18N20 Specs and Replacement
Type Designator: STV18N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: SO10
STV18N20 substitution
- MOSFET ⓘ Cross-Reference Search
STV18N20 datasheet
Detailed specifications: STP8N50XI , STP8NA50 , STP8NA50FI , STP9N30 , STP9NA50 , STP9NA50FI , STV10NA40 , STV12N20 , IRF2807 , STV33N10 , STV36N06 , STV3NA80 , STV40N05 , STV40N10 , STV4N100 , STV4NA60 , STV4NA80 .
Keywords - STV18N20 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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