NVTFS6H860NL Datasheet. Specs and Replacement
Type Designator: NVTFS6H860NL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 83 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: WDFN8
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NVTFS6H860NL substitution
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NVTFS6H860NL datasheet
nvtfs6h860nl.pdf
MOSFET - Power, Single N-Channel 80 V, 20 mW, 30 A NVTFS6H860NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS6H860NLWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 20 mW @ 10 V 80 V 30 A These Devi... See More ⇒
nvtfs6h860n.pdf
MOSFET - Power, Single N-Channel 80 V, 21.1 mW, 33 A NVTFS6H860N Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS6H860NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 80 V 21.1 mW @ 10 V 33 A These De... See More ⇒
nvtfs6h854n.pdf
MOSFET - Power, Single N-Channel 80 V, 14.5 mW, 48 A NVTFS6H854N Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS6H854NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 80 V 14.5 mW @ 10 V 48 A These De... See More ⇒
nvtfs6h880nl.pdf
MOSFET - Power, Single N-Channel 80 V, 29 mW, 22 A NVTFS6H880NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVTFS6H880NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 29 mW @ 10 V 80 V 22 A These Devi... See More ⇒
Detailed specifications: NVTFS5C670NL, NVTFS5C673NL, NVTFS5C680NL, NVTFS6H850N, NVTFS6H850NL, NVTFS6H854N, NVTFS6H854NL, NVTFS6H860N, IRLZ44N, NVTFS6H880N, NVTFS6H880NL, NVTFS6H888N, NVTFS6H888NL, NVTFS9D6P04M8L, STD25P03L, PJM02N60SA, PJM07P20SA
Keywords - NVTFS6H860NL MOSFET specs
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