PJM2300NSA-L
MOSFET. Datasheet pdf. Equivalent
Type Designator: PJM2300NSA-L
Marking Code: M02L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 5.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4
nC
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package:
SOT23
PJM2300NSA-L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJM2300NSA-L
Datasheet (PDF)
..1. Size:1200K pjsemi
pjm2300nsa-l.pdf 
PJM2300NSA-L N-Channel Enhancement Mode Power MOSFETFeatures SOT-23 Excellent R and Low Gate ChargeDS(ON) VDS= 20V I = 5.5A DR
4.1. Size:1608K pjsemi
pjm2300nsa.pdf
PJM2300NSA N-Channel MOSFETFeature SOT-23 TrenchFET Power MOSFET Excellent R and Low Gate ChargeDS(on)Applications 1. Gate 2.Source 3.Drain Load Switch for Portable DevicesMarking: M02 DC/DC ConverterSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TA =25 unless otherwise specified. Parameter Symbol Maximum Units
8.1. Size:1074K pjsemi
pjm2301psa-s.pdf
PJM2301PSA-S P- Enhancement Mode Field Effect Transistor Features SOT-23 VDS= -20V I = -2AD R =120m (typ) @ V =-2.5VDS(ON) GSR =88m (typ) @ V =-4.5VDS(ON) GS High power and current handing capability Halogen and Antimony Free Surface mount package1. Gate 2.Source 3.DrainMarking : S01Drain 3 Applications Battery protection Load s
8.2. Size:2298K pjsemi
pjm2305psa.pdf
PJM2305PSAP-Channel Power MOSFETSOT-23Features Fast switching Low gate charge and RDS(ON) Low reverse transfer capacitances1. Gate 2.Source 3.Drain Marking: S5Application Schematic Diagram Load switch and in PWM applicatopnsDrain3 Power management1GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Paramete
8.3. Size:3638K pjsemi
pjm2309psc.pdf
PJM2309PSCP-Channel Power MOSFETSOT-23-3 Features VDS= -60V I = -4AD RDS(ON)= 180m(max) @-10V2 Halogen and Antimony Free31Applications1. Gate 2.Source 3.Drain Load Switch and in PWM ApplicationsMarking: Q9 Power ManagementSchematic DiagramDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.
8.4. Size:1409K pjsemi
pjm2302nsa.pdf
PJM2302NSAN- Enhancement Mode Field Effect TransistorSOT-23 Features Fast Switching Low Gate Charge and RDS(on) High power and current handing capabilityApplications Battery protection1. Gate 2.Source 3.DrainMarking: M22 Load switch Power managementSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TC = 25 unless
8.5. Size:1405K pjsemi
pjm2301psa.pdf
PJM2301PSAP- Enhancement Mode Field Effect TransistorFeatures High power and current handing capabilitySOT-23 Halogen free product is acquired Surface mount package1. Gate 2.Source 3.DrainApplications Marking: M01 Battery protection Schematic Diagram Load switchDrain3 Power management1GateSource2Absolute Maximum Ratings Ratings at TA =25
8.6. Size:1016K pjsemi
pjm2302nsa-s.pdf
PJM2302NSA-SN- Enhancement Mode Field Effect TransistorSOT-23 Features Fast Switching Low Gate Charge and RDS(on) High power and current handing capabilityApplications Battery protection1. Gate 2.Source 3.DrainMarking: 22S Load switch Power managementSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TC = 25 unle
8.7. Size:2100K pjsemi
pjm2309psa.pdf
PJM2309PSAP-Channel Power MOSFETSOT-23Features VDS= -60V I = -2.0AD RDS(ON)= 200m(max) @-10V Halogen and Antimony Free1. Gate 2.Source 3.DrainApplicationsMarking: S9 Load Switch and in PWM ApplicationsSchematic Diagram Power Management Drain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Parameter
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