PJM2305PSA MOSFET. Datasheet pdf. Equivalent
Type Designator: PJM2305PSA
Marking Code: S5
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
|Id|ⓘ - Maximum Drain Current: 4.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.5 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 290 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT23
PJM2305PSA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJM2305PSA Datasheet (PDF)
pjm2305psa.pdf
PJM2305PSAP-Channel Power MOSFETSOT-23Features Fast switching Low gate charge and RDS(ON) Low reverse transfer capacitances1. Gate 2.Source 3.Drain Marking: S5Application Schematic Diagram Load switch and in PWM applicatopnsDrain3 Power management1GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Paramete
pjm2301psa-s.pdf
PJM2301PSA-S P- Enhancement Mode Field Effect Transistor Features SOT-23 VDS= -20V I = -2AD R =120m (typ) @ V =-2.5VDS(ON) GSR =88m (typ) @ V =-4.5VDS(ON) GS High power and current handing capability Halogen and Antimony Free Surface mount package1. Gate 2.Source 3.DrainMarking : S01Drain 3 Applications Battery protection Load s
pjm2300nsa-l.pdf
PJM2300NSA-L N-Channel Enhancement Mode Power MOSFETFeatures SOT-23 Excellent R and Low Gate ChargeDS(ON) VDS= 20V I = 5.5A DR
pjm2309psc.pdf
PJM2309PSCP-Channel Power MOSFETSOT-23-3 Features VDS= -60V I = -4AD RDS(ON)= 180m(max) @-10V2 Halogen and Antimony Free31Applications1. Gate 2.Source 3.Drain Load Switch and in PWM ApplicationsMarking: Q9 Power ManagementSchematic DiagramDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.
pjm2302nsa.pdf
PJM2302NSAN- Enhancement Mode Field Effect TransistorSOT-23 Features Fast Switching Low Gate Charge and RDS(on) High power and current handing capabilityApplications Battery protection1. Gate 2.Source 3.DrainMarking: M22 Load switch Power managementSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TC = 25 unless
pjm2301psa.pdf
PJM2301PSAP- Enhancement Mode Field Effect TransistorFeatures High power and current handing capabilitySOT-23 Halogen free product is acquired Surface mount package1. Gate 2.Source 3.DrainApplications Marking: M01 Battery protection Schematic Diagram Load switchDrain3 Power management1GateSource2Absolute Maximum Ratings Ratings at TA =25
pjm2302nsa-s.pdf
PJM2302NSA-SN- Enhancement Mode Field Effect TransistorSOT-23 Features Fast Switching Low Gate Charge and RDS(on) High power and current handing capabilityApplications Battery protection1. Gate 2.Source 3.DrainMarking: 22S Load switch Power managementSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TC = 25 unle
pjm2309psa.pdf
PJM2309PSAP-Channel Power MOSFETSOT-23Features VDS= -60V I = -2.0AD RDS(ON)= 200m(max) @-10V Halogen and Antimony Free1. Gate 2.Source 3.DrainApplicationsMarking: S9 Load Switch and in PWM ApplicationsSchematic Diagram Power Management Drain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Parameter
pjm2300nsa.pdf
PJM2300NSA N-Channel MOSFETFeature SOT-23 TrenchFET Power MOSFET Excellent R and Low Gate ChargeDS(on)Applications 1. Gate 2.Source 3.Drain Load Switch for Portable DevicesMarking: M02 DC/DC ConverterSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TA =25 unless otherwise specified. Parameter Symbol Maximum Units
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: PD570BA | RU6080L | SI7439DP | RUH85120M-C
History: PD570BA | RU6080L | SI7439DP | RUH85120M-C
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