All MOSFET. PJM3400NSC Datasheet

 

PJM3400NSC MOSFET. Datasheet pdf. Equivalent


   Type Designator: PJM3400NSC
   Marking Code: P0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 5.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SOT23

 PJM3400NSC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PJM3400NSC Datasheet (PDF)

 ..1. Size:3436K  pjsemi
pjm3400nsc.pdf

PJM3400NSC
PJM3400NSC

PJM3400NSCN- Enhancement Mode Field Effect TransistorSOT-23-3 Features VDS = 30V,ID = 5.8ARDS(ON)

 5.1. Size:2260K  pjsemi
pjm3400nsa.pdf

PJM3400NSC
PJM3400NSC

PJM3400NSAN- Enhancement Mode Field Effect TransistorSOT-23 Features VDS = 30V,ID = 5.8ARDS(ON)

 8.1. Size:3580K  pjsemi
pjm3401psc.pdf

PJM3400NSC
PJM3400NSC

PJM3401PSCP-Channel Power MOSFETSOT-23-3 Features VDS= -30V I = -4.5AD RDS(ON)= 60m(max) @-10V2 Halogen and Antimony Free31Applications1. Gate 2.Source 3.Drain Load Switch and in PWM ApplicationsMarking: P1Schematic DiagramDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Parameter Symbol Valu

 8.2. Size:2604K  pjsemi
pjm3401psa.pdf

PJM3400NSC
PJM3400NSC

PJM3401PSA P-Enhancement Field Effect TransistorFeaturesSOT-23 High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation1. Gate 2.Source 3.DrainMarking: R1ApplicationsSchematic Diagram Power switching applicationDrain3 Hard switched and high frequency circuits Unint

 8.3. Size:1464K  pjsemi
pjm3407psa.pdf

PJM3400NSC
PJM3400NSC

PJM3407PSAP Enhancement Field Effect TransistorSOT-23Features VDS=-30V, ID=-4.1ARDS(on)=50m (Typ.)@VGS=-10V High density cell design for ultra low RDS(ON) Low gate charge1. Gate 2.Source 3.DrainMarking: R7ApplicationsSchematic Diagram Load Switch and in PWM ApplicationsDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless ot

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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