STV3NA80 Specs and Replacement
Type Designator: STV3NA80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
Package: SO10
STV3NA80 substitution
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STV3NA80 datasheet
Detailed specifications: STP9N30 , STP9NA50 , STP9NA50FI , STV10NA40 , STV12N20 , STV18N20 , STV33N10 , STV36N06 , 2N60 , STV40N05 , STV40N10 , STV4N100 , STV4NA60 , STV4NA80 , STV50N05 , STV50N06 , STV55N05L .
Keywords - STV3NA80 MOSFET specs
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