OSG60R180ISF MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG60R180ISF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 163 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20.1 nS
Cossⓘ - Output Capacitance: 120.2 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO262
OSG60R180ISF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG60R180ISF Datasheet (PDF)
osg60r180psf osg60r180fsf osg60r180isf osg60r180hsf osg60r180ksf.pdf
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OSG60R180xSF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG60R180PSF/FSF/ISF/HSF/KSF , Enhancement Mode N-Channel Power MOSFET General Description OSG60
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