OSG60R180ISF Specs and Replacement
Type Designator: OSG60R180ISF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 163 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20.1 nS
Cossⓘ - Output Capacitance: 120.2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO262
OSG60R180ISF substitution
- MOSFET ⓘ Cross-Reference Search
OSG60R180ISF datasheet
osg60r180psf osg60r180fsf osg60r180isf osg60r180hsf osg60r180ksf.pdf
OSG60R180xSF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG60R180PSF/FSF/ISF/HSF/KSF , Enhancement Mode N-Channel Power MOSFET General Description OSG60... See More ⇒
Detailed specifications: UM5K1N, UT6MA3, OSG55R074HSZF, OSG55R140HF, OSG55R160FZF, OSG60R180FF, OSG60R180PSF, OSG60R180FSF, 75N75, OSG60R180HSF, OSG60R180KSF, OSG60R580FTF, OSG65R1K4AF, OSG65R1K4DF, OSG65R1K4FF, OSG65R1K4PF, OSG65R260FSF_NB
Keywords - OSG60R180ISF MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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