OSG60R580FTF Specs and Replacement
Type Designator: OSG60R580FTF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17.9 nS
Cossⓘ - Output Capacitance: 41.7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO220F
OSG60R580FTF substitution
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OSG60R580FTF datasheet
Detailed specifications: OSG55R140HF, OSG55R160FZF, OSG60R180FF, OSG60R180PSF, OSG60R180FSF, OSG60R180ISF, OSG60R180HSF, OSG60R180KSF, STP65NF06, OSG65R1K4AF, OSG65R1K4DF, OSG65R1K4FF, OSG65R1K4PF, OSG65R260FSF_NB, OSG65R290DEF, OSG65R290FEF, OSG65R290KEF
Keywords - OSG60R580FTF MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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