OSG65R1K4FF Specs and Replacement
Type Designator: OSG65R1K4FF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 24 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20.7 nS
Cossⓘ - Output Capacitance: 21.1 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220F
OSG65R1K4FF substitution
- MOSFET ⓘ Cross-Reference Search
OSG65R1K4FF datasheet
osg65r1k4af osg65r1k4df osg65r1k4ff osg65r1k4pf.pdf
OSG65R1K4xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG65R1K4AF, OSG65R1K4DF, OSG65R1K4FF, OSG65R1K4PF , Enhancement Mode N-Channel Power MOSFET Genera... See More ⇒
Detailed specifications: OSG60R180PSF, OSG60R180FSF, OSG60R180ISF, OSG60R180HSF, OSG60R180KSF, OSG60R580FTF, OSG65R1K4AF, OSG65R1K4DF, IRFZ48N, OSG65R1K4PF, OSG65R260FSF_NB, OSG65R290DEF, OSG65R290FEF, OSG65R290KEF, OSG65R360DTF, OSG65R380DEF, OSG65R380FEF
Keywords - OSG65R1K4FF MOSFET specs
OSG65R1K4FF cross reference
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OSG65R1K4FF substitution
OSG65R1K4FF replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: TPH2900ENH
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