OSG65R290FEF MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG65R290FEF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 19.5 nS
Cossⓘ - Output Capacitance: 74.1 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO220F
OSG65R290FEF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG65R290FEF Datasheet (PDF)
osg65r290fef osg65r290def osg65r290kef.pdf
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OSG65R290xEF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger EMI and performance balanced OSG65R290FEF, OSG65R290DEF, OSG65R290KEF , Enhancement Mode N-Channel
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .