STV4NA80 Specs and Replacement
Type Designator: STV4NA80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: SO10
STV4NA80 substitution
- MOSFET ⓘ Cross-Reference Search
STV4NA80 datasheet
Detailed specifications: STV18N20 , STV33N10 , STV36N06 , STV3NA80 , STV40N05 , STV40N10 , STV4N100 , STV4NA60 , IRFB31N20D , STV50N05 , STV50N06 , STV55N05L , STV55N06L , STV5NA50 , STV5NA80 , STV60N03L-12 , STV60N05 .
Keywords - STV4NA80 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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