OSG65R900DTF Datasheet. Specs and Replacement

Type Designator: OSG65R900DTF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.5 nS

Cossⓘ - Output Capacitance: 30.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO252

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OSG65R900DTF substitution

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OSG65R900DTF datasheet

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Detailed specifications: OSG65R260FSF_NB, OSG65R290DEF, OSG65R290FEF, OSG65R290KEF, OSG65R360DTF, OSG65R380DEF, OSG65R380FEF, OSG65R580DEF, IRFB3206, OSG70R600FF, OSG70R750DF, OSG80R1K4DF, OSG80R250FF, SFG08R06DF, SFG100N08PF, SFG10S10PF, SFS06R03DF

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs