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OSG65R900DTF Specs and Replacement


   Type Designator: OSG65R900DTF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11.5 nS
   Cossⓘ - Output Capacitance: 30.1 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO252
 

 OSG65R900DTF substitution

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OSG65R900DTF Specs

 ..1. Size:936K  oriental semi
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OSG65R900DTF

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 4.1. Size:1029K  oriental semi
 osg65r900def.pdf pdf_icon

OSG65R900DTF

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 4.2. Size:1034K  oriental semi
 osg65r900df.pdf pdf_icon

OSG65R900DTF

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 5.1. Size:1016K  oriental semi
 osg65r900pf.pdf pdf_icon

OSG65R900DTF

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Detailed specifications: OSG65R260FSF_NB , OSG65R290DEF , OSG65R290FEF , OSG65R290KEF , OSG65R360DTF , OSG65R380DEF , OSG65R380FEF , OSG65R580DEF , MMIS60R580P , OSG70R600FF , OSG70R750DF , OSG80R1K4DF , OSG80R250FF , SFG08R06DF , SFG100N08PF , SFG10S10PF , SFS06R03DF .

Keywords - OSG65R900DTF MOSFET specs

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