PSA10N70 Datasheet. Specs and Replacement

Type Designator: PSA10N70  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-220F

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PSA10N70 substitution

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PSA10N70 datasheet

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 psp10n70 psa10n70.pdf pdf_icon

PSA10N70

PSP10N70 PSA10N70 700V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 700V 0.80 10A RDS(ON),typ.=0.80 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Information TO-220 TO-220F Part Number Package Brand ... See More ⇒

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 psa10n65c.pdf pdf_icon

PSA10N70

PSA10N65C 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 0.70 10A RDS(ON),typ.=0.70 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D SMPS Standby Power S TO-220F Ordering Information Part Number Package Brand Package No to Scale PSA1... See More ⇒

 8.2. Size:743K  pipsemi
 psa10n60c.pdf pdf_icon

PSA10N70

PSA10N60C 600V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 600V 0.65 10A RDS(ON),typ.=0.65 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D SMPS Standby Power S TO-220F Ordering Information Part Number Package Brand Package No to Scale PSA1... See More ⇒

Detailed specifications: PSA07N65, PSA10N60C, PSA10N65C, PSA13N50, PSP13N50, PSP06N70, PSA06N70, PSP10N70, 10N60, PSU04N65B, PSD04N65B, PSU07N65, PSD07N65, PTA04N100, PTA04N80, PTA05N65, PTA07N65B

Keywords - PSA10N70 MOSFET specs

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