PTA04N80 Datasheet. Specs and Replacement
Type Designator: PTA04N80 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO-220F
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PTA04N80 substitution
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PTA04N80 datasheet
pta04n80.pdf
PTA04N80 800V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 800V 3.7 4A RDS(ON),typ.=3.7 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications CRT,TV/Monitor Other Applications Ordering Information Part Number Package Brand PTA04N80 TO-220F Absolute Maximum Rati... See More ⇒
pta04n100.pdf
PTA04N100 1000V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 1000V 2.0 4.0A RDS(ON),typ.=2.0 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G SMPS Standby Power D S Ordering Information TO-220F Part Number Package Brand Package No to Scale PT... See More ⇒
Detailed specifications: PSA06N70, PSP10N70, PSA10N70, PSU04N65B, PSD04N65B, PSU07N65, PSD07N65, PTA04N100, 7N65, PTA05N65, PTA07N65B, PTA08N100, PTA09N45, PTA13N45, PTA22N60, PTA22N65, PTA25N50
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