PTA26N60 Datasheet. Specs and Replacement

Type Designator: PTA26N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 1410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO-220F

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PTA26N60 datasheet

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PTA26N60

PTA26N60 600V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 600V 250m 26A RDS(ON),typ.=250 m @VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS G D S Ordering Information Part Number Package Brand TO-220F Package P... See More ⇒

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PTA26N60

PTA26N65 650V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 650V 280m 26A RDS(ON),typ.=280 m @VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS G D S Ordering Information Part Number Package Brand TO-220F Package ... See More ⇒

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PTA26N60

PTA26N70 700V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 700V 350m 26A RDS(ON),typ.=350 m @VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS G D S Ordering Information Part Number Package Brand TO-220F Package P... See More ⇒

Detailed specifications: PTA05N65, PTA07N65B, PTA08N100, PTA09N45, PTA13N45, PTA22N60, PTA22N65, PTA25N50, IRF4905, PTA26N65, PTA26N70, PTA28N50, PTF12N90, PTF27N80, PTH03N150, PTA03N150, PTP01N04N

Keywords - PTA26N60 MOSFET specs

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