STV5NA50 Specs and Replacement
Type Designator: STV5NA50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
Package: SO10
STV5NA50 substitution
- MOSFET ⓘ Cross-Reference Search
STV5NA50 datasheet
Detailed specifications: STV40N10, STV4N100, STV4NA60, STV4NA80, STV50N05, STV50N06, STV55N05L, STV55N06L, IRFZ46N, STV5NA80, STV60N03L-12, STV60N05, STV60N05-16, STV60N06, STV6NA60, STV7NA40, STV7NA60
Keywords - STV5NA50 MOSFET specs
STV5NA50 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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