PTP02N04N Datasheet and Replacement
Type Designator: PTP02N04N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 280 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 1100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TO-220
PTP02N04N substitution
PTP02N04N Datasheet (PDF)
ptp02n04n.pdf

PTP02N04N40V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 40V 1.6m 280A RDS(ON),typ.=1.6 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification UPS InverterOrdering Information Part Number Package B
ptp02n04nb.pdf

PTP02N04NB 40V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Trench Technology 40V 1.65m 245A RDS(ON),typ.=1.65 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification G UPS Inverter D S Ordering Information TO-220
ptp02n03n.pdf

PTP02N03N 30V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Trench Technology 30V 2.6m 120A RDS(ON),typ.=2.6 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters G Motor Bridge Switch D S Oring FET/Load Switching TO-220 Ordering Informatio
Datasheet: PTA26N70 , PTA28N50 , PTF12N90 , PTF27N80 , PTH03N150 , PTA03N150 , PTP01N04N , PTP02N03N , RFP50N06 , PTP02N04NB , PTP04N04A , PTP08N06N , PTP08N06NB , PTP08N08NA , PTP08N65 , PTA08N65 , PTP09N50 .
History: QM6015B | TPC8203 | AOWF20S60 | AP3403GH | P0903BIS | CSD08N6P5 | BLS60R150W
Keywords - PTP02N04N MOSFET datasheet
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History: QM6015B | TPC8203 | AOWF20S60 | AP3403GH | P0903BIS | CSD08N6P5 | BLS60R150W



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