STV5NA80 Specs and Replacement
Type Designator: STV5NA80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: SO10
STV5NA80 substitution
- MOSFET ⓘ Cross-Reference Search
STV5NA80 datasheet
Detailed specifications: STV4N100, STV4NA60, STV4NA80, STV50N05, STV50N06, STV55N05L, STV55N06L, STV5NA50, IRF830, STV60N03L-12, STV60N05, STV60N05-16, STV60N06, STV6NA60, STV7NA40, STV7NA60, STV8NA50
Keywords - STV5NA80 MOSFET specs
STV5NA80 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: STLT19FI | STV4N100 | STV33N10
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