PTP10N40B Datasheet. Specs and Replacement

Type Designator: PTP10N40B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO-220

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PTP10N40B datasheet

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PTP10N40B

PTP10N40B PTA10N40B 400V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 400V 0.45 10A RDS(ON),typ.=0.45 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D S G D Other Applications S Ordering Information TO-220 TO-220F Part Number... See More ⇒

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PTP10N40B

PTP10N80 PTA10N80 800V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 800V 1.0 10A RDS(ON),typ.=1.0 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications ATX Power G LCD Panel Power D S G D S Ordering Information Part Number Package Brand TO-220 TO-220F ... See More ⇒

 9.1. Size:1916K  cn puolop
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PTP10N40B

PTP10HN10 100V/100A N-Chnnel MOSFET Features D 100V/100A RDS(ON)=7.1m (typ.)@ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current % 100 Avalanche Tested Application Power Supply TO-220 DC-DC Converters UPS Battery Manageme ent System Absolute Maximum Ratings (T =25 C unless otherwise noted) A Sy... See More ⇒

Detailed specifications: PTP08N06NB, PTP08N08NA, PTP08N65, PTA08N65, PTP09N50, PTA09N50, PTP09N90, PTA09N90, TK10A60D, PTA10N40B, PTP10N80, PTA10N80, PTP11N08A, PTP11N40, PTA11N40, PTP11N45, PTA11N45

Keywords - PTP10N40B MOSFET specs

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