STV60N03L-12 Datasheet. Specs and Replacement

Type Designator: STV60N03L-12  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 450 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: SO10

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STV60N03L-12 datasheet

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STV60N03L-12

STV60NE06-16 N - CHANNEL 60V - 0.013 - 60A PowerSO-10 STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STV60NE06-16 60 V ... See More ⇒

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Detailed specifications: STV4NA60, STV4NA80, STV50N05, STV50N06, STV55N05L, STV55N06L, STV5NA50, STV5NA80, IRLB3034, STV60N05, STV60N05-16, STV60N06, STV6NA60, STV7NA40, STV7NA60, STV8NA50, STW12N60

Keywords - STV60N03L-12 MOSFET specs

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