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STV60N03L-12 Spec and Replacement


   Type Designator: STV60N03L-12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 450 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SO10

 STV60N03L-12 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STV60N03L-12 Specs

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STV60N03L-12

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STV60N03L-12

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STV60N03L-12

STV60NE06-16 N - CHANNEL 60V - 0.013 - 60A PowerSO-10 STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STV60NE06-16 60 V ... See More ⇒

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Detailed specifications: STV4NA60 , STV4NA80 , STV50N05 , STV50N06 , STV55N05L , STV55N06L , STV5NA50 , STV5NA80 , IRLB3034 , STV60N05 , STV60N05-16 , STV60N06 , STV6NA60 , STV7NA40 , STV7NA60 , STV8NA50 , STW12N60 .

Keywords - STV60N03L-12 MOSFET specs

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