PTP11N08A Datasheet. Specs and Replacement

Type Designator: PTP11N08A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO-220

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PTP11N08A datasheet

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PTP11N08A

PTP11N08A 80V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 80V 9.5m 75A RDS(ON),typ.=9.5 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification G D UPS Inverter S TO-220 Ordering Information Package No to Scale... See More ⇒

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PTP11N08A

PTP11N40 PTA11N40 400V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 400V 0.35 11A RDS(ON),typ.=0.35 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D S G D Other Applications S Ordering Information TO-220 TO-220F Part Number P... See More ⇒

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PTP11N08A

PTP11N45 PTA11N45 450V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 450V 0.39 11A RDS(ON),typ.=0.39 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D S G D Other Applications S Ordering Information TO-220 TO-220F Part Number P... See More ⇒

Detailed specifications: PTP09N50, PTA09N50, PTP09N90, PTA09N90, PTP10N40B, PTA10N40B, PTP10N80, PTA10N80, IRFP250, PTP11N40, PTA11N40, PTP11N45, PTA11N45, PTP12N60, PTA12N60, PTP12N65, PTA12N65

Keywords - PTP11N08A MOSFET specs

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