PTP11N40 Datasheet and Replacement
Type Designator: PTP11N40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-220
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PTP11N40 Datasheet (PDF)
ptp11n40 pta11n40.pdf

PTP11N40 PTA11N40 400V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 400V 0.35 11A RDS(ON),typ.=0.35 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D S G D Other Applications S Ordering Information TO-220 TO-220F Part Number P
ptp11n45 pta11n45.pdf

PTP11N45 PTA11N45 450V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 450V 0.39 11A RDS(ON),typ.=0.39 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D S G D Other Applications S Ordering Information TO-220 TO-220F Part Number P
ptp11n08a.pdf

PTP11N08A 80V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 80V 9.5m 75A RDS(ON),typ.=9.5 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification G D UPS Inverter S TO-220 Ordering Information Package No to Scale
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Keywords - PTP11N40 MOSFET datasheet
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History: IRF7473 | 2SK1571



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