PTP11N45 Datasheet. Specs and Replacement
Type Designator: PTP11N45 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-220
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PTP11N45 substitution
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PTP11N45 datasheet
ptp11n45 pta11n45.pdf
PTP11N45 PTA11N45 450V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 450V 0.39 11A RDS(ON),typ.=0.39 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D S G D Other Applications S Ordering Information TO-220 TO-220F Part Number P... See More ⇒
ptp11n40 pta11n40.pdf
PTP11N40 PTA11N40 400V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 400V 0.35 11A RDS(ON),typ.=0.35 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D S G D Other Applications S Ordering Information TO-220 TO-220F Part Number P... See More ⇒
ptp11n08a.pdf
PTP11N08A 80V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 80V 9.5m 75A RDS(ON),typ.=9.5 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification G D UPS Inverter S TO-220 Ordering Information Package No to Scale... See More ⇒
Detailed specifications: PTA09N90, PTP10N40B, PTA10N40B, PTP10N80, PTA10N80, PTP11N08A, PTP11N40, PTA11N40, 10N65, PTA11N45, PTP12N60, PTA12N60, PTP12N65, PTA12N65, PTP13N50B, PTA13N50B, PTP13N60
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
