PTP12N60 Datasheet and Replacement
Type Designator: PTP12N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO-220
PTP12N60 substitution
PTP12N60 Datasheet (PDF)
ptp12n60 pta12n60.pdf

PTP12N60 PTA12N60 600V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 600V 0.55 12A RDS(ON),typ.=0.55 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Information TO-220 TO-220F Part Number Package Brand
ptp12n65 pta12n65.pdf

PTP12N65 PTA12N65 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 0.60 12A RDS(ON),typ.=0.60 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Information TO-220 TO-220F Part Number Package Brand
ptp12hn06 pty12hn06.pdf

PTP12HN06/PTY12HN0660V/65AN-ChnnelMOSFET60V/120A N-Chnnel MOSFETFeatures 60V/120AA DRDS(ON)=4.2m VGS=10V (typ.)@ V Lead fre en Device Aee and Gree Available Low Rds ductive Loss Gs-on to Minimize Cond s High ava urrent alanche CuS% 100 Avalanche TestedDApplication Power SupplyG S DC-DC Converters UPS TO-
Datasheet: PTA10N40B , PTP10N80 , PTA10N80 , PTP11N08A , PTP11N40 , PTA11N40 , PTP11N45 , PTA11N45 , SKD502T , PTA12N60 , PTP12N65 , PTA12N65 , PTP13N50B , PTA13N50B , PTP13N60 , PTA13N60 , PTP13N65 .
History: FTA04N60C
Keywords - PTP12N60 MOSFET datasheet
PTP12N60 cross reference
PTP12N60 equivalent finder
PTP12N60 lookup
PTP12N60 substitution
PTP12N60 replacement
History: FTA04N60C



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