STV60N05 Spec and Replacement
Type Designator: STV60N05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 500 nS
Cossⓘ - Output Capacitance: 950 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SO10
STV60N05 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STV60N05 Specs
stv60ne06-16.pdf
STV60NE06-16 N - CHANNEL 60V - 0.013 - 60A PowerSO-10 STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STV60NE06-16 60 V ... See More ⇒
Detailed specifications: STV4NA80 , STV50N05 , STV50N06 , STV55N05L , STV55N06L , STV5NA50 , STV5NA80 , STV60N03L-12 , IRF9640 , STV60N05-16 , STV60N06 , STV6NA60 , STV7NA40 , STV7NA60 , STV8NA50 , STW12N60 , STW12NA50 .
Keywords - STV60N05 MOSFET specs
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