PTP14508E Datasheet. Specs and Replacement

Type Designator: PTP14508E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 273 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 145 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: TO-220

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PTP14508E datasheet

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PTP14508E

PTP14508E PTB14508E Pb Lead Free Package 80V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 80V 4.8m 145A RDS(ON),typ.=4.8 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification G G D UPS Inverter D S S Order... See More ⇒

Detailed specifications: PTP12N65, PTA12N65, PTP13N50B, PTA13N50B, PTP13N60, PTA13N60, PTP13N65, PTA13N65, 8N60, PTB14508E, PTP15N50, PTA15N50, PTP16N06N, PTL16N06N, PTP16N60, PTA16N60, PTP16N65

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