PTP16N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: PTP16N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 54 nC
trⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 218 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-220
PTP16N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTP16N60 Datasheet (PDF)
ptp16n60 pta16n60.pdf
PTP16N60 PTA16N60 600V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology600V 0.41 16A RDS(ON),typ.=0.41 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Power Supply LCD Panel Power Ordering Information Part Number Package Brand PTP16N60
ptp16n65 pta16n65.pdf
PTP16N65 PTA16N65 650V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 650V 0.45 16A RDS(ON),typ.=0.45 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Power Supply LCD Panel Power Ordering Information Part Number Package Brand PTP16N65 TO-220 PTA16N
ptp16n06n ptl16n06n.pdf
PTP16N06N PTL16N06N 60V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Trench Technology 60V 13.5m 55A RDS(ON),typ.=13.5 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Automotive DC Motor Control Class D Amplifier Ordering Information Part Number Package Brand PTP16N
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
