SPTA60R130E MOSFET. Datasheet pdf. Equivalent
Type Designator: SPTA60R130E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 48 nC
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 208 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO-220F
SPTA60R130E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPTA60R130E Datasheet (PDF)
spta60r130e.pdf
SPTA60R130E 600V N-ch Multi-Epi Super-Junction MOSFET RDS(ON),typ. ID General Features BVDSS@TjMAX Multi-Epi Process 650V 0.11 25A Proprietary New Super-Junction Technology RDS(ON),typ.=0.11@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor G Charger D S SMPS Standby Power TO-220F Ordering Information
spta65r350e.pdf
SPTA65R350E 650V N-ch Multi-Epi Super-Junction MOSFET RDS(ON),typ. ID General Features BVDSS@TjMAX Multi-Epi Process 700V 0.32 12A Proprietary New Super-Junction Technology RDS(ON),typ.=0.32@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S SMPS Standby Power TO-220F Ordering Information Pa
sptp65r160 spta65r160.pdf
SPTP65R160 SPTA65R160 650V N-ch Super-Junction MOSFET General Features BVDSS@ T ID J=150 RDS(ON),typ. Proprietary New Super-Junction Technology 700V 0.16 20A RDS(ON),typ.=0.16 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Inf
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
