RU1H150R MOSFET. Datasheet pdf. Equivalent
Type Designator: RU1H150R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 288 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 108 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 150 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 117 nC
trⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 1250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-220
RU1H150R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU1H150R Datasheet (PDF)
ru1h150r.pdf
RU1H150RN-Channel Advanced Power MOSFETFeatures Pin Description 108V/150A, RDS (ON) =3.5m(Typ.)@VGS=10V Advanced HEFET Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DDDDDDDApplicat
ru1h150s.pdf
RU1H150SN-Channel Advanced Power MOSFETFeatures Pin Description 108V/150A, RDS (ON) =3.5m(Typ.)@VGS=10VD Advanced HEFET Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DDDDDDDApplicat
ru1h130q.pdf
RU1H130QN-Channel Advanced Power MOSFETFeatures Pin Description100V/130A, RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DApplications High Efficiency Synchronous Rectification in SMPS High Speed Power SwitchingGSN-Chan
ru1h130r.pdf
RU1H130RN-Channel Advanced Power MOSFETFeatures Pin Description100V/130A, RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplications High Efficiency Synchronous Rectification in SMPS High Speed Power SwitchingGSN-Chan
ru1h100r.pdf
RU1H100RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/75ARDS (ON)=11m (Typ.) @ VGS=10V Ultra Low On-Resistance Extremely high dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche testedApplicationsHigh Speed Power SwitchingUninterruptible Power SupplyN-Channel MOSFETAbsolute Maximum RatingsSymbol Parame
ru1h190s.pdf
RU1H190SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/190A,RDS (ON) =5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche testedTO-263 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application SystemsN-Channe
ru1h130s.pdf
RU1H130SN-Channel Advanced Power MOSFETFeatures Pin Description100V/130A, RDS (ON) =7m(Typ.)@VGS=10VD Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications High Efficiency Synchronous Rectification in SMPS High Speed Power SwitchingGSN-Chan
ru1h190r.pdf
RU1H190RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/190A,RDS (ON) =5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application SystemsN-Channe
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: KU086N10F
History: KU086N10F
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