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STV7NA60 Spec and Replacement


   Type Designator: STV7NA60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: SO10

 STV7NA60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STV7NA60 Specs

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STV7NA60

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STV7NA60

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Detailed specifications: STV5NA50 , STV5NA80 , STV60N03L-12 , STV60N05 , STV60N05-16 , STV60N06 , STV6NA60 , STV7NA40 , RU7088R , STV8NA50 , STW12N60 , STW12NA50 , STW14N50 , STW15N50 , STW15NA50 , STW16N40 , STW20NA50 .

History: AP65N03DF | AP68N04DF

Keywords - STV7NA60 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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