STV8NA50 PDF and Equivalents Search

 

STV8NA50 Specs and Replacement

Type Designator: STV8NA50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm

Package: SO10

STV8NA50 substitution

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STV8NA50 datasheet

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STV8NA50

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Detailed specifications: STV5NA80, STV60N03L-12, STV60N05, STV60N05-16, STV60N06, STV6NA60, STV7NA40, STV7NA60, MMIS60R580P, STW12N60, STW12NA50, STW14N50, STW15N50, STW15NA50, STW16N40, STW20NA50, STW55N10

Keywords - STV8NA50 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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