RU7080S
MOSFET. Datasheet pdf. Equivalent
Type Designator: RU7080S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 111
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 80
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 50
nC
trⓘ - Rise Time: 94
nS
Cossⓘ -
Output Capacitance: 380
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package:
TO263
RU7080S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU7080S
Datasheet (PDF)
..1. Size:1227K ruichips
ru7080s.pdf
RU7080SN-Channel Advanced Power MOSFETFeatures Pin Description 70V/80A,D RDS (ON) =7m(Typ.)@VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications Motor Drives Uninterruptible Power SuppliesG DC/DC converter
8.1. Size:328K ruichips
ru7080l.pdf
RU7080LN-Channel Advanced Power MOSFETFeatures Pin Description 70V/80A,D RDS (ON) =5.7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications Power SupplyGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating UnitC
8.2. Size:634K ruichips
ru7080r.pdf
RU7080RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 70V/80A,RDS (ON) =7m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche testedTO-220 175C Operating Temperature Lead Free,RoHS compliantApplications Switching Application SystemsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitC
9.1. Size:306K ruichips
ru7088a.pdf
RU7088AN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 65V/88A,RDS (ON) =6m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications The device is suitable for use inPWM ,load switching and generalpurpose applications.N-Channel
9.2. Size:295K ruichips
ru7088r.pdf
RU7088RN-Channel Advanced Power MOSFETFeatures Pin Description 70V/80A, RDS (ON) =6.5m(Typ.)@VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)TO220Applications Switching Application Syste
9.3. Size:450K ruichips
ru7088r3.pdf
RU7088R3N-Channel Advanced Power MOSFETFeatures Pin Description 70V/80A,Insulation Slug RDS (ON) =6.5m(Typ.)@VGS=10V Insulation Slug(VISO1500VAC) Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedF t S it hi d F ll A l h R t d 100% avalanche tested 175C Operating TemperatureS Lead Free and Gre
9.4. Size:300K ruichips
ru7085r.pdf
RU7085RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 70V/85A,RDS (ON) =6m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Power SupplyN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Rati
9.5. Size:757K cn vbsemi
ru7088r.pdf
RU7088Rwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.005 at VGS = 10 V 120 Material categorization:600.008 at VGS = 7.5 V100TO-220ABDGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit Uni
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