.8205A PDF and Equivalents Search

 ..1. Size:51K  hsmc
 h8205a.pdf

Spec. No. MOS200905 HI-SINCERITY Issued Date 2009.02.27 Revised Date 2010.06.30 MICROELECTRONICS CORP. Page No. 1/4 H8205A 8-Lead Plastic TSSOP-8L Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) Package Code TS H8205A Symbol & Pin Assignment Description 8 7 6 5 Pin 1 Drain Pin 2 / 3 Source 1 Q2 This N-Channel 2.5V specified MOSFET is a rugged gate version... See More ⇒

 ..2. Size:381K  shenzhen
 s8205a.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET N MOSFET Dual N-Channel Enhancement Mode Field Effect Transistor S8205A TSSOP-8 Unit mm Features 5A,20V.rDS(on) = 0.025 @VGS =4.5 V rDS(on) = 0.040 @VGS =2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V Continuous Drain Current ID A 5 ... See More ⇒

 ..3. Size:451K  guangdong hottech
 s8205a.pdf

S8205A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES Low on-resistance V =20V,I =5A,R 25m @V =4.5V DS D DS(ON) GS Low gate charge For synchronous rectifier applications Surface Mount device SOT-23-6 MECHANICAL DATA Case SOT-23-6 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Moisture Sensitivity L... See More ⇒

 ..4. Size:328K  cn shenzhen fuman elec
 .8205a.pdf

FM , FM WWW.SZLCSC.COM, SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. .8205A ( S&CIC1850) 20V N MOS 2 3 4 20V N-Channel Enhancement-Mode MOSFET RDS(ON), Vgs@2.5V, Ids@3A = 2... See More ⇒

 ..5. Size:2391K  cn tuofeng
 s8205a.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-6 Plastic-Encapsulate MOSFETS S8205A S8205A Dual N-Channel MOSFET V(BR)DSS RDS(on)MAX ID Max SOT-23-6 0.022 @ 4.5V 20V 6.0A 0.030 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKING APPLI... See More ⇒

 ..6. Size:355K  cn haohai electr
 h8205a.pdf

H8205A N-Channel MOSFET 6A, 19.5V, H 8205A H8205A TSSOP-8 HAOHAI H8205A-TS 3000Pcs 30000Pcs NCE8205A UT8205A FS8205A CEG8205A S8205A GM8205A KI8205A TA8205A STN8205A H8205A ... See More ⇒

 0.1. Size:115K  onsemi
 ngd8205a.pdf

NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required... See More ⇒

 0.2. Size:420K  utc
 ut8205al-al6-r ut8205ag-ag6-r ut8205al-s08-r ut8205ag-s08-r ut8205al-p08-r ut8205ag-p08-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @ VGS=4.5V, ID=6.0A * Fast switching capability * Avalanch... See More ⇒

 0.3. Size:217K  utc
 ut8205a.pdf

UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @VGS = 4.5 V * Ultra low gate charge ( typical 23 nC ) * Low re... See More ⇒

 0.4. Size:2661K  jiangsu
 cjl8205a.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8205A Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23-6L 30 m @4.5V 5A 20V @2.5V 45m FEATURE APPLICATION TrenchFET Power MOSFET Battery Protection Excellent RDS(on) Load Switch Low Gate Charge Power Management High Power and Current Handing Ca... See More ⇒

 0.5. Size:2146K  htsemi
 pt8205a.pdf

PT8205A 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 38m RDS(ON), Vgs@ 4.5V, Ids@ 6A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications 1 8 D1 D2 2 7 S1 S2 3 6 S1 S2 4 5 G1 G2 TSSOP-8 Mi... See More ⇒

 0.6. Size:434K  cet
 ceg8205a.pdf

CEG8205A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS(ON) = 25m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. D 1 8 D Lead free product is acquired. 2 7 S2 S1 TSSOP-8 for Surface Mount Package. S1 3 6 S2 4 G1 5 G2 G2 S2 S2 G1 D S1 S1 D TSSOP... See More ⇒

 0.7. Size:344K  gsme
 gm8205a.pdf

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8205A Dual N-channel 20V, TSSOP-8 MOSFET N- Dual N-channel 20V, TSSOP-8 MOSFET N- Dual N-channel 20V, TSSOP-8 MOSFET N- Dual N-channel 20V, TSSOP-8 MOSFET N- ... See More ⇒

 0.8. Size:450K  silikron
 ssf8205a.pdf

SSF8205A DESCRIPTION D1 D2 The SSF8205A uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON) with gate voltages as low as 0.65V. This device is G1 G2 suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram GENERAL FEATURES V = 20V,I = 6A DS D R ... See More ⇒

 0.9. Size:292K  can-sheng
 cs8205a 6a sot-23-6.pdf

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com 8205A Dual N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 27.5 @ VG S = 4.0V 20V 6A S urface Mount Package. 37.5@V G S = 2.5V D1 D2 - ... See More ⇒

 0.10. Size:387K  can-sheng
 cs8205a sot-23-6.pdf

... See More ⇒

 0.11. Size:391K  can-sheng
 fs8205a tssop-8.pdf

... See More ⇒

 0.12. Size:235K  sino
 sm8205ao.pdf

SM8205AO Dual N-Channel Enhancement Mode MOSFET Features Pin Description D2 18V/6A, S2 S2 RDS(ON)= 23m (typ.) @ VGS= 4.5V G2 RDS(ON)= 34m (typ.) @ VGS= 2.5V D1 100% UIS Tested S1 S1 G1 Reliable and Rugged Lead Free and Green Devices Available Top View of TSSOP-8 (RoHS Compliant) (1) (8) D1 D2 Applications (4) (5) Power Management in Notebook Computer, G1 G2 Po... See More ⇒

 0.13. Size:287K  first silicon
 ftk8205a.pdf

SEMICONDUCTOR FTK8205A TECHNICAL DATA D 1 D 2 DESCRIPTION The FTK8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G 1 G 2 with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S 1 S 2 Schematic diagram GENERAL FEATURES VDS = 20V,ID = 6A D1 D2 RD... See More ⇒

 0.14. Size:672K  kexin
 ki8205a.pdf

SMD Type MOSFET SMDType Dual N-Channel Enhancement MOSFET KI8205A TSSOP-8 Unit mm Features 6.45+0.1 -0.1 6.5 A, 20 V. rDS(on) = 0.025 @ VGS = 4.5 V 4.45+0.1 -0.1 rDS(on) = 0.029 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 10 V Continuous Drain Current ID 6.5 A Pulsed Drain Current IDM 20 A ... See More ⇒

 0.15. Size:629K  belling
 blm8205a.pdf

Pb Free Product BLM8205A N-Channel Enhancement Mode Power MOSFET D1 D2 Description The BLM8205A uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram General Features VDS = 19.... See More ⇒

 0.16. Size:403K  ncepower
 nce8205a.pdf

Pb Free Product http //www.ncepower.com NCE8205A NCE N-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE8205A uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gener... See More ⇒

 0.17. Size:410K  prospower
 ps8205a.pdf

PS8205A 20V Dual Channel NMOSEFT Revision 1.0 Update Date Apr. 2011 ProsPower Microelectronics Co., Ltd PS8205A 20V Dual Channel NMOSFET 2. Applications 1. General Description Battery management in nomadic equipment The PS8205A uses advanced trench technology DC motor control and design to provide excellent Rds(on) with low DC-DC converters gate charge. This... See More ⇒

 0.18. Size:376K  semtron
 smc8205aw.pdf

SMC8205AW 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC8205AW is the Dual N-Channel logic 20V/6.0A, RDS(ON) =21m (typ.)@VGS =4.5V enhancement mode power field effect transistor 20V/5.2A, RDS(ON) =25m (typ.)@VGS =2.5V which is produced using high cell density. advanced trench technology to provide excellent RDS(ON). Super high density ce... See More ⇒

 0.19. Size:499K  semtron
 smc8205as.pdf

SMC8205AS 20V Dual N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC8205AS is the Dual N-Channel logic 20V/6.0A, RDS(ON) =20m (typ.)@VGS =4.5V enhancement mode power field effect transistor 20V/5.2A, RDS(ON) =24m (typ.)@VGS =2.5V which is produced using high cell density. advanced trench technology to provide excellent RDS(ON). Super high densi... See More ⇒

 0.20. Size:1327K  allpower
 ap8205a.pdf

... See More ⇒

 0.21. Size:302K  fortune semi
 fs8205a.pdf

REV. 1.2 FS8205A-DS-12_EN AUG 2009 Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET Only FSC Properties Reference For FS8205A Fortune Semiconductor Corporation 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel. 886-2-28094742 Fax 886-2-28094874 www.ic-fortune.com This manual contai... See More ⇒

 0.22. Size:4365K  fuxinsemi
 fs8205a.pdf

FS8205A N-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 25m @4.5V 20V 6A 32m @2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagram SOT-23-6L Marking G1 D1/D2 G2 8205A S1 D1/D2 S2 www.fuxinsemi.com Page 1 Ver2.1 FS... See More ⇒

 0.23. Size:573K  eternal
 et8205a.pdf

Eternal Semiconductor Inc. ET8205A Dual N-Channel High Density Trench MOSFET (20V, 6A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 19 @ VGS = 4.5V, ID=6A 20V 6.0A 20@ VGS = 4.0V, ID=6A 25@ VGS = 2.5V, ID=5.2A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Lead Pb -free and halogen-free Pin 1... See More ⇒

 0.24. Size:986K  jiejie micro
 jmtm8205a.pdf

JMTM8205A Description JMT Dual N-channel Enhancement Mode Power MosFET Features Applicatio l 19.5V, 5A l Load Switch RDS(ON) ... See More ⇒

 0.25. Size:2585K  cn szxunrui
 si8205a.pdf

SOT-23-6 Plastic-Encapsulate MOSFETS SI8205A Dual N-Channel MOSFET SI8205A V(BR)DSS RDS(on)MAX ID Max SOT-23-6 0.022 @ 4.5V 20V 6.0A 0.030 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKING APPLICATION Battery Protection Load Switch ... See More ⇒

 0.26. Size:1703K  winsok
 wst8205a.pdf

WST8205A Dual N-Ch MOSFET General Description Product Summery The WST8205A is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 32m 5.3A for most of the small power switching and load switch applications. Applications The WST8205A meet the RoHS and Green High Frequency Point-of-Load... See More ⇒

 0.27. Size:422K  cn sino-ic
 se8205a.pdf

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE8205A N-Channel Enhancement Mode Field Effect Transistor Revision B External Dimensions (Unit mm) Features VDS = 20V,ID = 6A RDS(ON) ... See More ⇒

 0.28. Size:787K  cn vbsemi
 vbzc8205a.pdf

VBZC8205A www.VBsemi.com Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.025 at VGS = 4.5 V Available 4.5 20 RoHS* 0.032 at VGS = 2.5 V 3.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RA... See More ⇒

 0.29. Size:1472K  cn vbsemi
 ut8205ag-ag6.pdf

UT8205AG-AG6 www.VBsemi.tw Dual N-Channel MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.024 at VGS = 4.5 V Available 6.0 100 % Rg Tested 20 RoHS* 0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC 5.0 COMPLIANT TSOP6 D D Top View S1 1 6 G1 D1/D2 2 5 D1/D2 G1 G2 S2 G2... See More ⇒

 0.30. Size:1138K  cn vbsemi
 vbzb8205a.pdf

VBZB8205A www.VBsemi.com Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.024 at VGS = 4.5 V Available 6.0 100 % Rg Tested 20 RoHS* 0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC 5.0 COMPLIANT TSOP6 D D Top View S1 1 6 G1 D1/D2 2 5 D1/D2 G1 G... See More ⇒

 0.31. Size:405K  cn tech public
 ut8205ag-ag6.pdf

www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw ... See More ⇒

 0.32. Size:1805K  cn tech public
 tpm8205ats6.pdf

... See More ⇒

 0.33. Size:1795K  cn tech public
 fs8205a.pdf

... See More ⇒

 0.34. Size:1323K  cn yangzhou yangjie elec
 yjs8205a.pdf

RoHS COMPLIANT YJS8205A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 5.5A D R ( at V =4.5V) 25mohm DS(ON) GS R ( at V =2.5V) 32mohm DS(ON) GS R ( at V =1.8V) 49mohm DS(ON) GS 100% V Tested DS General Description Trench Power MV MOSFET technology High Power and current handing capability... See More ⇒

 0.35. Size:407K  cn wuxi unigroup
 ttk8205a.pdf

TTK8205A Wuxi Unigroup Microelectronics CO.,LTD. 20V N-Channel Trench MOSFET Features Product Summary VDS 20V Trench Power Technology Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

 0.36. Size:438K  cn hmsemi
 hm8205a.pdf

HM8205A Dual N-Channel Enhancement Mode Power MOSFET D1 D2 Description The HM8205A uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram General Features VDS = 19.5V,ID = 6A RDS(... See More ⇒

 0.37. Size:1271K  cn apm
 ap8205a-21.pdf

AP8205A-21 20V N+N-Channel Enhancement Mode MOSFET Description The AP8205A-21 uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =6.5A DS D R ... See More ⇒