PTF10N65 Datasheet and Replacement. Cross Reference Search

PTF10N65 Datasheet (PDF)

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PTF1 0N6565 0V/1 0A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 0.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D STO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above

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PTF 1014970 Watts, 921960 MHzGOLDMOS Field Effect TransistorDescription INTERNALLY MATCHEDThe PTF 10149 is an internally matched 70watt GOLDMOS FETintended for cellular and GSM amplifier applications from 921 to Performance at 960 MHz, 26 Volts960 MHz. It operates with 50% efficiency and 16 dB typical gain.- Output Power = 70 WattsNitride surface passivation and

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PTF10HN08/PTY10HN0880V/100A N-Chnnel MOSFETFeaturesD 80V/100ARDS(ON)=6.5m (typ.)@ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive LossS High avalanche CurrentD% 100 Avalanche TestedApplicationG SG D S Power SupplyTO-220F TO-263 DC-DC Converters UPS Battery Manageme eAbsolute Maximum Ratings

Datasheet: PTD3004 , PTD3006 , PTD4080B , PTD4N60 , PTD50N06 , PTD60N02 , PTD7N65 , PTD80N06 , 2N7000 , PTF10HN08 , PTY10HN08 , PTF12N65 , PTF13N50 , PTF2N65 , PTF5N65 , PTF7N65 , PTF8N65 .