PTF7N65 Datasheet and Replacement
Type Designator: PTF7N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO220F
PTF7N65 substitution
PTF7N65 Datasheet (PDF)
ptf7n65.pdf

PTF7 N6565 0V/7 A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 1.0 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D STO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
Datasheet: PTD80N06 , PTF10N65 , PTF10HN08 , PTY10HN08 , PTF12N65 , PTF13N50 , PTF2N65 , PTF5N65 , AO3400 , PTF8N65 , PTN3006 , PTN30P03 , PTP10HN10 , PTP12HN06 , PTY12HN06 , PTP4N60 , PTF4N60 .
History: CHM9424JGP | PV510BA | S-LBSS8402DW1T1G | OSG90R1K2DF | AOTF280A60L | LNH08R085 | KUK110-50GL
Keywords - PTF7N65 MOSFET datasheet
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History: CHM9424JGP | PV510BA | S-LBSS8402DW1T1G | OSG90R1K2DF | AOTF280A60L | LNH08R085 | KUK110-50GL



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