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PTF7N65 Spec and Replacement


   Type Designator: PTF7N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO220F

 PTF7N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PTF7N65 Specs

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PTF7N65

PTF7 N65 65 0V/7 A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 1.0 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t... See More ⇒

Detailed specifications: PTD80N06 , PTF10N65 , PTF10HN08 , PTY10HN08 , PTF12N65 , PTF13N50 , PTF2N65 , PTF5N65 , AO3401 , PTF8N65 , PTN3006 , PTN30P03 , PTP10HN10 , PTP12HN06 , PTY12HN06 , PTP4N60 , PTF4N60 .

History: MTP3055VL | 2SK1295

Keywords - PTF7N65 MOSFET specs

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