PDC3801R Datasheet. Specs and Replacement

Type Designator: PDC3801R  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.5 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: PPAK5X6

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PDC3801R datasheet

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PDC3801R

30V N-Channel MOSFETs PDC3801R General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 30V 9m 55A advanced technology has been especially tailored to Q2 30V 6m 80A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Features av... See More ⇒

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PDC3801R

30V N-Channel MOSFETs PDC3803R General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 30V 9.5m 43A advanced technology has been especially tailored to Q2 30V 4.2m 85A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Features ... See More ⇒

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PDC3801R

PDC3810V 30V Dual N-Channel MOSFETs General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 13m 35A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,35A, RDS(ON) =13m @VGS = 10V performance, and withstand h... See More ⇒

Detailed specifications: PTY12HN06, PTP4N60, PTF4N60, PDB1216E, PDB3010H, PDC2306Z, PDC2603Z, PDC2604Z, IRF530, PDC3803R, PDC3810V, PDC3902X, PDC3903X, PDC3903Z, PDC3904Z, PDC3905Z, PDC3906Z

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