PDC3801R Spec and Replacement
Type Designator: PDC3801R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12.5 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: PPAK5X6
PDC3801R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PDC3801R Specs
pdc3801r.pdf
30V N-Channel MOSFETs PDC3801R General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 30V 9m 55A advanced technology has been especially tailored to Q2 30V 6m 80A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Features av... See More ⇒
pdc3803r.pdf
30V N-Channel MOSFETs PDC3803R General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 30V 9.5m 43A advanced technology has been especially tailored to Q2 30V 4.2m 85A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Features ... See More ⇒
pdc3810v.pdf
PDC3810V 30V Dual N-Channel MOSFETs General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 13m 35A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,35A, RDS(ON) =13m @VGS = 10V performance, and withstand h... See More ⇒
Detailed specifications: PTY12HN06 , PTP4N60 , PTF4N60 , PDB1216E , PDB3010H , PDC2306Z , PDC2603Z , PDC2604Z , IRF530 , PDC3803R , PDC3810V , PDC3902X , PDC3903X , PDC3903Z , PDC3904Z , PDC3905Z , PDC3906Z .
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