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PDC3903X Spec and Replacement


   Type Designator: PDC3903X
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.5 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: PPAK5X6

 PDC3903X Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PDC3903X Specs

 ..1. Size:1058K  potens
pdc3903x.pdf pdf_icon

PDC3903X

30V P-Channel MOSFETs PDC3903X General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-60A, RDS(ON) =8.5m @VGS = -10V performance, and withstand hig... See More ⇒

 7.1. Size:861K  potens
pdc3903z.pdf pdf_icon

PDC3903X

30V P-Channel MOSFETs PDC3903Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -50A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-50A, RDS(ON) =8.5m @VGS = -10V performance, and withstand hig... See More ⇒

 8.1. Size:986K  potens
pdc3908x.pdf pdf_icon

PDC3903X

30V N-Channel MOSFETs PDC3908X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 8.5m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =8.5m @VGS = 10V performance, and withstand high ene... See More ⇒

 8.2. Size:301K  potens
pdc3904z.pdf pdf_icon

PDC3903X

30V N-Channel MOSFETs PDC3904Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 3.8m 80A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features 30V,80A, RDS(ON) =3.8m @VGS = 10V performance, and withstand high energ... See More ⇒

Detailed specifications: PDB3010H , PDC2306Z , PDC2603Z , PDC2604Z , PDC3801R , PDC3803R , PDC3810V , PDC3902X , STP80NF70 , PDC3903Z , PDC3904Z , PDC3905Z , PDC3906Z , PDC3907Z , PDC3908X , PDC3908Z , PDC3912Z .

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Keywords - PDC3903X MOSFET specs

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