PDC3903X
MOSFET. Datasheet pdf. Equivalent
Type Designator: PDC3903X
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 96
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 60
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 35
nC
trⓘ - Rise Time: 10.5
nS
Cossⓘ -
Output Capacitance: 410
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085
Ohm
Package: PPAK5X6
PDC3903X
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PDC3903X
Datasheet (PDF)
..1. Size:1058K potens
pdc3903x.pdf 
30V P-Channel MOSFETs PDC3903X General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-60A, RDS(ON) =8.5m@VGS = -10V performance, and withstand hig
7.1. Size:861K potens
pdc3903z.pdf
30V P-Channel MOSFETs PDC3903Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -50A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-50A, RDS(ON) =8.5m@VGS = -10V performance, and withstand hig
8.1. Size:986K potens
pdc3908x.pdf
30V N-Channel MOSFETs PDC3908X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 8.5m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =8.5m@VGS = 10V performance, and withstand high ene
8.2. Size:301K potens
pdc3904z.pdf
30V N-Channel MOSFETs PDC3904Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 3.8m 80A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features 30V,80A, RDS(ON) =3.8m@VGS = 10V performance, and withstand high energ
8.3. Size:538K potens
pdc3906z.pdf
30V N-Channel MOSFETs PDC3906Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 6m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =6m@VGS = 10V performance, and withstand high energy
8.4. Size:539K potens
pdc3905z.pdf
30V P-Channel MOSFETs PDC3905Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 15m -30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-30A, RDS(ON) =18m@VGS = -10V performance, and withstand high
8.5. Size:902K potens
pdc3902x.pdf
30V N-Channel MOSFETs PDC3902X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 1.6m 130A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V, 130A, RDS(ON) =1.6m@VGS = 10V performance, and withstand high
8.6. Size:828K potens
pdc3907z.pdf
30V P-Channel MOSFETs PDC3907Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 18m -30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-30A, RDS(ON) =18m@VGS = -10V performance, and withstand high
8.7. Size:822K potens
pdc3908z.pdf
30V N-Channel MOSFETs PDC3908Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 8.5m 48A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,48A, RDS(ON) =8.5m@VGS = 10V performance, and withstand high ene
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