All MOSFET. PDC3905Z Datasheet

 

PDC3905Z Datasheet and Replacement


   Type Designator: PDC3905Z
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21.8 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: PPAK3X3
 

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PDC3905Z Datasheet (PDF)

 ..1. Size:539K  potens
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PDC3905Z

30V P-Channel MOSFETs PDC3905Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 15m -30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-30A, RDS(ON) =18m@VGS = -10V performance, and withstand high

 8.1. Size:986K  potens
pdc3908x.pdf pdf_icon

PDC3905Z

30V N-Channel MOSFETs PDC3908X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 8.5m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =8.5m@VGS = 10V performance, and withstand high ene

 8.2. Size:301K  potens
pdc3904z.pdf pdf_icon

PDC3905Z

30V N-Channel MOSFETs PDC3904Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 3.8m 80A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features 30V,80A, RDS(ON) =3.8m@VGS = 10V performance, and withstand high energ

 8.3. Size:861K  potens
pdc3903z.pdf pdf_icon

PDC3905Z

30V P-Channel MOSFETs PDC3903Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -50A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-50A, RDS(ON) =8.5m@VGS = -10V performance, and withstand hig

Datasheet: PDC2604Z , PDC3801R , PDC3803R , PDC3810V , PDC3902X , PDC3903X , PDC3903Z , PDC3904Z , P60NF06 , PDC3906Z , PDC3907Z , PDC3908X , PDC3908Z , PDC3912Z , PDC3960X , PDC3964X , PDC3964Z .

History: CHM4201PAGP | IPW65R070C6 | HMS4438 | SIHF9620S | IRHMB57Z60 | FDS6609A | SSM4509M

Keywords - PDC3905Z MOSFET datasheet

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